Publication

Modeling buffer layer IGBTs with an efficient parameter extraction method

Bibliographic Details
Summary:	A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results.
Subject:	Engenharia electrotécnica, Engenharia do ambiente Electrical engineering, Environmental engineering
Country:	Portugal
Document type:	book
Access type:	Restricted
Associated institution:	Repositório Aberto da Universidade do Porto
Language:	English
Origin:	Repositório Aberto da Universidade do Porto

Description
Summary:	A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results.